BSP89 E6327 Tech Spezifikatioune
Infineon Technologies - BSP89 E6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSP89 E6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.8V @ 108µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-SOT223-4 | |
| Serie | SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 240 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 350mA (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSP89 E6327.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | BSP89 E6327 | BSP89H6327XTSA1 | BSP88E6327 | BSP89E6327 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| Entworf fir Source Voltage (Vdss) | 240 V | 240 V | 240 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 350mA (Ta) | 350mA (Ta) | 350mA (Ta) | - |
| Supplier Device Package | PG-SOT223-4 | PG-SOT223-4 | PG-SOT223-4 | - |
| FET Feature | - | - | - | - |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Vgs (th) (Max) @ Id | 1.8V @ 108µA | 1.8V @ 108µA | 1.4V @ 108µA | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) | 1.7W (Ta) | - |
| Serie | SIPMOS® | SIPMOS® | SIPMOS® | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 2.8V, 4.5V | - |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V | 6.4 nC @ 10 V | 6.8 nC @ 10 V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V | 6Ohm @ 350mA, 10V | 6Ohm @ 350mA, 10V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V | 140 pF @ 25 V | 95 pF @ 25 V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
Eroflueden BSP89 E6327 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSP89 E6327 - Infineon Technologies.
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BSP89 .118Freescale / NXP SemiconductorsBSP89 L6327Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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